BDT30B

SKU: BDT30B

BDT30B Transistor Silicon PNP - CASE: TO220 MAKE: NXP Semiconductors

Price: £11.99

+ VAT 20% for UK purchases

£11.99

Qty

+ VAT 20% for UK purchases

Product specifications

Weight	0.01 kg
Equivalent	BDT30
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	NXP Semiconductors
Vbr CBO	120
Vbr CEO	80
Max. PD (W)	30
t(f) Max. (S)	1.0u-+
Max. hFE	75
Min hFE	15
Ic Max. (A)	1.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Tr Max. (s)	15n
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	150
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	84742

Back