The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BDT31AF
View detailed images (12)

BDT31AF

SKU: BDT31AF
BDT31AF Transistor Silicon NPN CASE: TO220F MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO220F
Manufacturer Generic
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 15
t(f) Max. (S) 1.0u-+
Max. hFE 50
Min hFE 10
Ic Max. (A) 3.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
Tr Max. (s) 15n
Oper. Temp (°C) Max. 150
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 737262
Back