BDT60A

SKU: BDT60A

BDT60A Transistor Silicon PNP CASE: TO220 MAKE: Generic

Datasheet

BDT60A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Power Innovations
Vbr CEO	80
Max. PD (W)	50
t(on) Delay (S)	1.5u
t(f) Max. (S)	5.0u
Min hFE	750
Ic Max. (A)	4.0
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	200u
Mat.	Silicon Logic
Polarity	PNP
Tr Max. (s)	15n
Derate Above 25°C	16m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1.5 MHz
Forward Current Transfer Ratio (hFE), MIN	750
SKU	116041

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