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BDT60B
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BDT60B

SKU: BDT60B
BDT60B Transistor Silicon PNP CASE: TO220 MAKE: Texas Instruments
Price:
£7.19 Inc. VAT (£5.99 Ex. VAT)
£7.19 Inc. VAT (£5.99 Ex. VAT)
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Datasheet
BDT60B Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer Texas Instruments
Vbr CEO 100
Max. PD (W) 50
t(on) Delay (S) 1.5u
t(f) Max. (S) 5.0u
Min hFE 750
Ic Max. (A) 4.0
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 200u
Mat. Silicon Logic
Polarity PNP
Tr Max. (s) 15n
Derate Above 25°C 16m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN 750
SKU 85444
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