BDT60C

SKU: BDT60C

BDT60C Transistor Silicon PNP CASE: TO220 MAKE: Texas Instruments

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£7.19 Inc. VAT (£5.99 Ex. VAT)

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Datasheet

BDT60C Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO220
Manufacturer	Texas Instruments
Vbr CEO	120
Max. PD (W)	50
t(on) Delay (S)	1.5u
t(f) Max. (S)	5.0u
Min hFE	750
Ic Max. (A)	4.0
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	200u
Mat.	Silicon Logic
Polarity	PNP
Tr Max. (s)	15n
Derate Above 25°C	16m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1.5 MHz
Forward Current Transfer Ratio (hFE), MIN	750
SKU	85445

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