BDT61A

SKU: BDT61A

BDT61A Transistor Silicon NPN CASE: TO220 MAKE: Generic

Datasheet

BDT61A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Power Innovations
Vbr CEO	80
Max. PD (W)	50
t(on) Delay (S)	2.0u
t(f) Max. (S)	8.0u
Min hFE	750
Ic Max. (A)	4.0
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	200u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	15n
Derate Above 25°C	16m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1.5 MHz
Forward Current Transfer Ratio (hFE), MIN	750
SKU	116042

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