BDT61B

SKU: BDT61B

BDT61B Transistor Silicon NPN CASE: TO220 MAKE: NXP Semiconductors

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£7.19 Inc. VAT (£5.99 Ex. VAT)

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Datasheet

BDT61B Datasheet

Product specifications

Weight	0.01 kg
Equivalent	BDT61BF
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	NXP Semiconductors
Vbr CEO	100
Max. PD (W)	50
t(on) Delay (S)	2.0u
t(f) Max. (S)	8.0u
Min hFE	750
Ic Max. (A)	4.0
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	200u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	15n
Derate Above 25°C	16m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1.5 MHz
Forward Current Transfer Ratio (hFE), MIN	750
SKU	116043

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