BDT61C

SKU: BDT61C

BDT61C Transistor Silicon NPN CASE: TO220 MAKE: Texas Instruments

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

Qty

Datasheet

BDT61C Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Texas Instruments
Vbr CEO	120
Max. PD (W)	50
t(on) Delay (S)	2.0u
t(f) Max. (S)	8.0u
Min hFE	750
Ic Max. (A)	4.0
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	200u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	15n
Derate Above 25°C	16m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1.5 MHz
Forward Current Transfer Ratio (hFE), MIN	750
SKU	84755

Back