BDT63AF

SKU: BDT63AF

BDT63AF Transistor Silicon NPN CASE: TO220F MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220F
Manufacturer	Generic
Vbr CEO	80
Max. PD (W)	21
t(on) Delay (S)	2.5u
t(f) Max. (S)	10u+
Min hFE	1.0k
Ic Max. (A)	10
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	200u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	15n
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-37
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	17 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	2000
SKU	737228

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