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BDT63B
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BDT63B

SKU: BDT63B
BDT63B Transistor Silicon NPN - CASE: TO220 MAKE: NXP Semiconductors
Price: £5.99
+ VAT 20% for UK purchases
£5.99
Qty
+ VAT 20% for UK purchases
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Product specifications
Equivalent BDT63
Type Transistor Silicon NPN
Case TO220
Manufacturer NXP Semiconductors
Vbr CEO 100
Max. PD (W) 90
t(on) Delay (S) 2.5u
t(f) Max. (S) 10u+
Min hFE 1.0k
Ic Max. (A) 10
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 200u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 15n
R(sat) (Û) 666m
Derate Above 25°C 714m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 85899
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