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BDT63F
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BDT63F

SKU: BDT63F
BDT63F Transistor Silicon NPN CASE: TO220F MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO220F
Manufacturer Generic
Vbr CEO 60
Max. PD (W) 21
t(on) Delay (S) 2.5u
t(f) Max. (S) 10u+
Min hFE 1.0k
Ic Max. (A) 10
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 200u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 15n
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 17 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 737226
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