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BDT64AF
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BDT64AF

SKU: BDT64AF
BDT64AF Transistor Silicon PNP CASE: TO220F MAKE: Philips
Datasheet
BDT64AF Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220F
Manufacturer Philips
Vbr CEO 80
Max. PD (W) 22
t(on) Delay (S) 2.0u
t(f) Max. (S) 5.0u+
Min hFE 1.0k
Ic Max. (A) 16
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 400u
Mat. Silicon Logic
Polarity PNP
Tr Max. (s) 15n
@VCE (test) 4.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 22 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 349673
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