The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BDT65B
View detailed images (12)

BDT65B

SKU: BDT65B
BDT65B Transistor Silicon NPN CASE: TO220 MAKE: NXP Semiconductors
Price:
£7.19 Inc. VAT (£5.99 Ex. VAT)
£7.19 Inc. VAT (£5.99 Ex. VAT)
Qty
  • More pieces shipped in 14 days
?
Datasheet
BDT65B Datasheet
Product specifications
Equivalent BDT65
Type Transistor Silicon NPN
Case TO220
Manufacturer NXP Semiconductors
Vbr CEO 100
Max. PD (W) 125
t(on) Delay (S) 2.5u
t(f) Max. (S) 10u+
Min hFE 1.0k
Ic Max. (A) 12
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 400u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 15n
@VCE (test) 4.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 115607
Back