| BDT65C Datasheet |
| Equivalent | BDT65 | |
| Type | Transistor Silicon NPN | |
| Case | TO220 | |
| Manufacturer | NXP Semiconductors | |
| Vbr CEO | 120 | |
| Max. PD (W) | 125 | |
| t(on) Delay (S) | 2.5u | |
| t(f) Max. (S) | 10u+ | |
| Min hFE | 1.0k | |
| Ic Max. (A) | 12 | |
| @Ic (test) (A) | 5.0 | |
| Icbo Max. @Vcb Max. (A) | 400u | |
| Mat. | Silicon Logic | |
| Polarity | NPN | |
| Tr Max. (s) | 15n | |
| @VCE (test) | 4.0 | |
| Oper. Temp (°C) Max. | 150 | |
| Pinout Equivalence Number | 3-37 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 125 W | |
| Maximum Collector-Base Voltage |Vcb| | 120 V | |
| Maximum Collector-Emitter Voltage |Vce| | 120 V | |
| Maximum Collector Current |Ic max| | 12 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Transition Frequency (ft): | 10 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 2000 | |
| SKU | 16764 | |