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BDT65C
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BDT65C

SKU: BDT65C
BDT65C Transistor Silicon NPN - CASE: TO220 MAKE: NXP Semiconductors
Price: £4.79
+ VAT 20% for UK purchases
£4.79
Qty
+ VAT 20% for UK purchases
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Datasheet
BDT65C Datasheet
Product specifications
Case TO220
Type Transistor Silicon NPN
Manufacturer NXP Semiconductors
Vbr CEO 120
Max. PD (W) 125
t(on) Delay (S) 2.5u
t(f) Max. (S) 10u+
Min hFE 1.0k
Ic Max. (A) 12
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 400u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 15n
@VCE (test) 4.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 16764
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