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BDT87F
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BDT87F

SKU: BDT87F
BDT87F Transistor Silicon NPN CASE: TO220F MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO220F
Manufacturer Philips
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 21
Max. hFE 40-
Ic Max. (A) 15
@Ic (test) (A) 5.0
Polarity NPN
Oper. Temp (°C) Max. 150
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 21 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 407320
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