BDV65

SKU: BDV65

BDV65 Transistor Silicon NPN - CASE: TO218 MAKE: NTE Electronics

Price: £11.99

+ VAT 20% for UK purchases

£11.99

Qty

+ VAT 20% for UK purchases

Datasheet

BDV65 Datasheet

Product specifications

Weight	0.01 kg
Case	TO218
Type	Transistor Silicon NPN
Manufacturer	NTE Electronics
Vbr CEO	60
Max. PD (W)	125
t(on) Delay (S)	1.0u-
t(f) Max. (S)	3.0u-
Min hFE	1.0k
Ic Max. (A)	12
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	400u
Mat.	Silicon Logic
Polarity	NPN
R(sat) (Û)	400m
t(stor) Max. (S)	1.1u-
Derate Above 25°C	1.0
Trans. Freq (Hz) Min.	70k
@VCE (test)	4.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-37
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	125 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	300 pF
Forward Current Transfer Ratio (hFE), MIN	2000
SKU	84763

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