BDV65C

SKU: BDV65C

BDV65C Transistor Silicon NPN CASE: TO218 MAKE: ST Microelectronics - STM

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

BDV65C Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO218
Manufacturer	ST Microelectronics - STM
Vbr CEO	120
Max. PD (W)	125
t(on) Delay (S)	1.0u-
t(f) Max. (S)	3.0u-
Min hFE	1.0k
Ic Max. (A)	12
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	400u
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	1.0
Trans. Freq (Hz) Min.	7.0M
@VCE (test)	4.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-37
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	125 W
Maximum Collector-Base Voltage \|Vcb\|	140 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	2000
SKU	79812

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