BDV67

SKU: BDV67

BDV67 Transistor Silicon NPN CASE: TO3P MAKE: Philips

Datasheet

BDV67 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3P
Manufacturer	Philips
Vbr CEO	60
Max. PD (W)	175
Min hFE	1.0k
Ic Max. (A)	16
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	1.0m
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	715m
Trans. Freq (Hz) Min.	7.0M
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	16 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	2000
SKU	83075

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