BDV67A

SKU: BDV67A

BDV67A Transistor Silicon NPN CASE: TO3P MAKE: Generic

Datasheet

BDV67A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3P
Manufacturer	MOSPEC Semiconductor
Vbr CEO	80
Max. PD (W)	200
t(on) Delay (S)	1.0u-
t(f) Max. (S)	3.5u-+
Min hFE	1.0k
Ic Max. (A)	16
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	1.0m
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	715m
Trans. Freq (Hz) Min.	7.0M
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-37
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	16 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	2000
SKU	372341

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