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BDW25
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BDW25

SKU: BDW25
BDW25 Transistor Silicon NPN CASE: SOT9 MAKE: Siemens Semiconductors
Datasheet
BDW25 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT9
Manufacturer Siemens Semiconductors
Vbr CEO 125
Max. PD (W) 26
Max. hFE 100
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 150u
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 30M
@VCE (test) 1.0
Oper. Temp (°C) Max. 175
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 26 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector-Emitter Voltage |Vce| 130 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 577285
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