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BDW51B
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BDW51B

SKU: BDW51B
BDW51B Transistor Silicon NPN CASE: TO3 MAKE: SGS Thomson
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
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Datasheet
BDW51B Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer SGS Thomson
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 125
Max. hFE 150
Min hFE 20
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
R(sat) (Û) 300m
Derate Above 25°C 714m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 117 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 84264
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