BDW51C

SKU: BDW51C

BDW51C Transistor Silicon NPN CASE: TO3 MAKE: ST Microelectronics - STM

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Datasheet

BDW51C Datasheet

Product specifications

Weight	0.01 kg
Equivalent	BDW51
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	ST Microelectronics - STM
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	125
Max. hFE	150
Min hFE	20
Ic Max. (A)	15
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
R(sat) (Û)	300m
Derate Above 25°C	714m
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	117 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	79813

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