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BDW52A
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BDW52A

SKU: BDW52A
BDW52A Transistor Silicon PNP CASE: TO3 MAKE: SGS Thomson
Datasheet
BDW52A Datasheet
Product specifications
Equivalent BDW52
Type Transistor Silicon PNP
Case TO3
Manufacturer SGS Thomson
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 125
Derate (Amb) (W/°C) 714m
Max. hFE 150
Min hFE 20
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 500u
Polarity PNP
R(sat) (Û) 300m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 117 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 136170
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