| BDW52B Datasheet |
| Type | Transistor Silicon PNP | |
| Case | TO3 | |
| Manufacturer | ST Microelectronics - STM | |
| Vbr CBO | 80 | |
| Vbr CEO | 80 | |
| Max. PD (W) | 125 | |
| Derate (Amb) (W/°C) | 714m | |
| Max. hFE | 150 | |
| Min hFE | 20 | |
| Ic Max. (A) | 15 | |
| @Ic (test) (A) | 5.0 | |
| Icbo Max. @Vcb Max. (A) | 500u | |
| Polarity | PNP | |
| R(sat) (Û) | 300m | |
| Trans. Freq (Hz) Min. | 3.0M | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 4.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 125 W | |
| Maximum Collector-Emitter Voltage |Vce| | 80 V | |
| Maximum Collector Current |Ic max| | 15 A | |
| Transition Frequency (ft): | 3 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 20 | |
| SKU | 84265 | |