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BDW52C
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BDW52C

SKU: BDW52C
BDW52C Transistor Silicon PNP CASE: TO3 MAKE: ST Microelectronics - STM
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
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Datasheet
BDW52C Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer ST Microelectronics - STM
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 125
Derate (Amb) (W/°C) 714m
Max. hFE 150
Min hFE 20
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 500u
Polarity PNP
R(sat) (Û) 300m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 117 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 84027
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