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BDW55
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BDW55

SKU: BDW55
BDW55 Transistor Silicon NPN CASE: TO126 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Philips
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 8.0
Max. hFE 250
Min hFE 40
Ic Max. (A) 1.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
R(sat) (Û) 250m
Derate Above 25°C 100m
Trans. Freq (Hz) Min. 250M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 8 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 136171
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