BDW57

SKU: BDW57

BDW57 Transistor Silicon NPN CASE: TO126 MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO126
Manufacturer	Philips
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	8.0
Max. hFE	250
Min hFE	40
Ic Max. (A)	1.0
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
R(sat) (Û)	250m
Derate Above 25°C	100m
Trans. Freq (Hz) Min.	250M
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	8 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	136173

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