BDW60

SKU: BDW60

BDW60 Transistor Silicon PNP CASE: TO126 MAKE: NXP Semiconductors

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

Qty

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	NXP Semiconductors
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	8.0
Derate (Amb) (W/°C)	100m
Max. hFE	250
Min hFE	40
Ic Max. (A)	1.0
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Tr Max. (s)	30n
R(sat) (Û)	250m
Trans. Freq (Hz) Min.	250M
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	8 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	125 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	136176

Back