BDX12

SKU: BDX12

BDX12 Transistor Silicon NPN CASE: TO3 MAKE: ST Microelectronics - STM

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Datasheet

BDX12 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	ST Microelectronics - STM
Vbr CBO	140
Vbr CEO	120
Max. PD (W)	100
Max. hFE	70
Min hFE	20
Ic Max. (A)	5.0
@Ic (test) (A)	2.0
Polarity	NPN
Derate Above 25°C	571m
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	140 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	0.8 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	136183

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