BDX18N

SKU: BDX18N

BDX18N Transistor Silicon PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Comset Semiconductors
Vbr CBO	70
Vbr CEO	60
Max. PD (W)	117
Derate (Amb) (W/°C)	667m
Max. hFE	70
Min hFE	20
Ic Max. (A)	15
@Ic (test) (A)	4.0
Polarity	PNP
R(sat) (Û)	275m
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	117 W
Maximum Collector-Base Voltage \|Vcb\|	70 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	136185

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