BDX28-6

SKU: BDX28-6

BDX28-6 Transistor Silicon PNP CASE: TO3 MAKE: Generic

Datasheet

BDX28-6 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Siemens Semiconductors
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	40
Derate (Amb) (W/°C)	228m
Max. hFE	100
Min hFE	40
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Tr Max. (s)	500n
Trans. Freq (Hz) Min.	50M
Oper. Temp (°C) Max.	175
@VCE (V)	1.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	737147

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