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BDX29-6
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BDX29-6

SKU: BDX29-6
BDX29-6 Transistor Silicon PNP CASE: SOT9 MAKE: Siemens Semiconductors
Datasheet
BDX29-6 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT9
Manufacturer Siemens Semiconductors
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 40
Derate (Amb) (W/°C) 228m
Max. hFE 100
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 500n
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 407350
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