BDX30

SKU: BDX30

BDX30 Transistor Silicon PNP CASE: TO3 MAKE: Siemens Semiconductors

Datasheet

BDX30 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Siemens Semiconductors
Vbr CBO	125
Vbr CEO	125
Max. PD (W)	50
Max. hFE	100
Min hFE	40
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	PNP
Trans. Freq (Hz) Min.	50M
Oper. Temp (°C) Max.	175
@VCE (V)	1.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	125 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	737144

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