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BDX35
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BDX35

SKU: BDX35
BDX35 Transistor Silicon NPN CASE: TO126 MAKE: NXP Semiconductors
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
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Datasheet
BDX35 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer NXP Semiconductors
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 1.2
t(f) Max. (S) 500n+
Max. hFE 450
Min hFE 45
Ic Max. (A) 5.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 300n
R(sat) (Û) 180m
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 150
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 36 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SKU 84775
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