The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BDY10
View detailed images (13)

BDY10

SKU: BDY10
BDY10 Transistor Silicon NPN CASE: TO3 MAKE: NXP Semiconductors
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 1 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer NXP Semiconductors
Vbr CBO 50
Vbr CEO 40
Max. PD (W) 150
t(f) Max. (S) 3.0u-
Max. hFE 50
Min hFE 10
Ic Max. (A) 2.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 300u
Polarity NPN
Tr Max. (s) 4.0n-
R(sat) (Û) 350m
Derate Above 25°C 5.0
Trans. Freq (Hz) Min. 10k
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 115619
Back