BDY11

SKU: BDY11

BDY11 Transistor Silicon NPN CASE: TO3 MAKE: Discrete Semiconductor Industries - DSI

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Discrete Semiconductor Industries - DSI
Vbr CBO	100
Vbr CEO	70
Max. PD (W)	150
t(f) Max. (S)	3.0u-
Max. hFE	50
Min hFE	10
Ic Max. (A)	2.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	300u
Polarity	NPN
Tr Max. (s)	4.0u-
R(sat) (Û)	350m
Derate Above 25°C	5.0
Trans. Freq (Hz) Min.	10k
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	70 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	115620

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