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BDY12-10
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BDY12-10

SKU: BDY12-10
BDY12-10 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Price:
£23.99 Inc. VAT (£19.99 Ex. VAT)
£23.99 Inc. VAT (£19.99 Ex. VAT)
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Datasheet
BDY12-10 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Siemens Semiconductors
Vbr CEO 40
Max. PD (W) 26
Max. hFE 160
Min hFE 63
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 300n
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 70M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 4-30
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 26 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 63
SKU 407362
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