BDY13-6

SKU: BDY13-6

BDY13-6 Transistor Silicon NPN CASE: TO3 MAKE: Generic

Datasheet

BDY13-6 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Siemens Semiconductors
Vbr CEO	60
Max. PD (W)	26
Max. hFE	100
Min hFE	40
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Tr Max. (s)	300n
Derate Above 25°C	200m
Trans. Freq (Hz) Min.	70M
Oper. Temp (°C) Max.	175
@VCE (V)	1.0
Pinout Equivalence Number	4-30
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	26 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	407366

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