BDY16B
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BDY16B

SKU: BDY16B
BDY16B Transistor Silicon NPN CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Generic
Vbr CBO 64
Vbr CEO 64
Max. PD (W) 12
Max. hFE 300
Min hFE 100
Ic Max. (A) 2.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
R(sat) (Û) 400m
Derate Above 25°C 76m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 64 V
Maximum Collector-Emitter Voltage |Vce| 64 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 737103
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