The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BDY23

BDY23

SKU: BDY23
BDY23 Transistor Silicon NPN CASE: TO3 MAKE: Motorola Semiconductor
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • 2 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
BDY23 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Motorola Semiconductor
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 85
Max. hFE 180
Min hFE 15
Ic Max. (A) 6.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 500n
R(sat) (Û) 500m
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 87 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 84808
Back