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BDY27
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BDY27

SKU: BDY27
BDY27 Transistor Silicon NPN CASE: TO3 MAKE: SGS Thomson
Datasheet
BDY27 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer SGS Thomson
Vbr CBO 400
Vbr CEO 200
Max. PD (W) 85
Max. hFE 180
Min hFE 15
Ic Max. (A) 6.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 500n
R(sat) (Û) 300m
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 87 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 313748
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