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BDY55
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BDY55

SKU: BDY55
BDY55 Transistor Silicon NPN CASE: TO3 MAKE: ST Microelectronics - STM
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
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Datasheet
BDY55 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer ST Microelectronics - STM
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 115
Max. hFE 70
Min hFE 20
Ic Max. (A) 15
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 700u
Polarity NPN
Tr Max. (s) 500n
R(sat) (Û) 250m
Derate Above 25°C 1.5
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 115 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 115622
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