BDY62

SKU: BDY62

BDY62 Transistor Silicon NPN - Case: TO3 Make: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Philips
Vbr CBO	30
Vbr CEO	30
t(f) Max. (S)	80n-
Min hFE	45
Ic Max. (A)	5.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Tr Max. (s)	150n-
R(sat) (Û)	180m
Derate Above 25°C	200m
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	45
SKU	115625

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