BDY63

SKU: BDY63

BDY63 Transistor Silicon NPN CASE: TO211MA MAKE: Texas Instruments

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO211MA
Manufacturer	Texas Instruments
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	3.5
Max. hFE	150
Min hFE	30
Ic Max. (A)	10
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	40M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	372352

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