The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BDY69

BDY69

SKU: BDY69
BDY69 Transistor Silicon PNP CASE: TO211MA MAKE: Texas Instruments
Product specifications
Type Transistor Silicon PNP
Case TO211MA
Manufacturer Texas Instruments
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 3.5
Derate (Amb) (W/°C) 500m
Max. hFE 80
Min hFE 20
Ic Max. (A) 12
@Ic (test) (A) 6.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 582952
Back