BDY89

SKU: BDY89

BDY89 Transistor Silicon NPN CASE: TO3 MAKE: Siemens Semiconductors

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Siemens Semiconductors
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	35
Min hFE	2.0k
Ic Max. (A)	8.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Derate Above 25°C	228m
Oper. Temp (°C) Max.	175
@VCE (V)	2.0
Pinout Equivalence Number	3-39
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	200 °C
Forward Current Transfer Ratio (hFE), MIN	200
SKU	407383

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