BDY99

SKU: BDY99

BDY99 Transistor Silicon NPN CASE: TO3 MAKE: Philips

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Philips
Vbr CEO	250
Max. PD (W)	40
t(f) Max. (S)	600n-
Ic Max. (A)	10
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
R(sat) (Û)	300m
Derate Above 25°C	666m
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	125
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	750 V
Maximum Collector-Emitter Voltage \|Vce\|	250 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	561739

Back