Weight |
0.01 kg
|
Case |
TO39 |
Type |
Transistor Silicon NPN |
Manufacturer |
Motorola Semiconductor |
Vbr CEO |
200 |
Max. PD (W) |
3.0 |
Min hFE |
20 |
Ic Max. (A) |
80m |
@Ic (test) (A) |
60m |
Icbo Max. @Vcb Max. (A) |
200n |
Polarity |
NPN |
Derate Above 25°C |
40m |
Trans. Freq (Hz) Min. |
120M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
20 |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
3 W |
Maximum Collector-Base Voltage |Vcb| |
200 V |
Maximum Collector-Emitter Voltage |Vce| |
90 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.08 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Collector Capacitance (Cc) |
3.5 pF |
Transition Frequency (ft): |
60M MHz |
Forward Current Transfer Ratio (hFE), MIN |
20 |
SKU |
85921 |