Weight |
0.01 kg
|
Case |
TO18 |
Type |
Transistor Silicon NPN |
Manufacturer |
Siemens Semiconductors |
Vbr CEO |
220 |
Max. PD (W) |
300m |
Derate (Amb) (W/°C) |
2.0m |
hfe |
20 |
Ic Max. (A) |
50m |
Icbo Max. @Vcb Max. (A) |
200n |
Polarity |
NPN |
@VCE (test) (V) |
10i |
Oper. Temp (°C) Max. |
175 |
@Ic (A) |
10m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.3 W |
Maximum Collector-Base Voltage |Vcb| |
220 V |
Maximum Collector-Emitter Voltage |Vce| |
220 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.005 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Collector Capacitance (Cc) |
7 pF |
Transition Frequency (ft): |
55 MHz |
Forward Current Transfer Ratio (hFE), MIN |
20 |
SKU |
79839 |